| PART |
Description |
Maker |
| ADG918BCP ADG919BCP ADG919 ADG918 ADG918BRM ADG919 |
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches 宽带，四三分贝隔GHz时的CMOS 1.65 V.75V的，2:1复用/ SPDT开
Wideband 43dB Isolation 1GHz CMOS 1.65 V to 2.75V 2:1 Mux/SPDT Switches
Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
|
Analog Devices, Inc.
AD[Analog Devices]
|
| BFR93 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BFR106 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
NXP Semiconductors
Philips Semiconductors
|
| D2225UK D2225 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2002UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB
Seme LAB
|
| D2213UK D2213 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推拉)
|
SEME-LAB[Seme LAB]
|
| BFG403W BFG403W-2015 |
From old datasheet system
TRANSISTOR,BJT,NPN,4.5V V(BR)CEO,3.6MA I(C),SOT-343R
NPN 17 GHz wideband transistor
|
Quanzhou Jinmei Electro...
Philips Semiconductors
|
| BFG480W-15 |
NPN wideband transistor
|
NXP Semiconductors
|
| D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET 金属门射频硅场效应管
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| BFG67W BFG67W_X BFG67W_XR BFG67W/X BFG67W/XR |
NPN 8 GHz wideband transistor
|
NXP Semiconductors
Philips Semiconductors
|
